n-c hannel e nhancement mode f ield e ffect t rans is tor s urface mount p ackage. s amhop microelectronics c orp. p r oduc t s ummar y v ds s i d r ds (on) ( m ) max 20v 6.5a 30 @ v g s = 4.5v f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. 40 @ v g s = 2.5v s t s 2306e ab s olut e maximum r at ing s (t a =25 c unles s otherwis e noted) 1 j an. 10 2008 v er1.0 e s d p rotected. p arameter s ymbol limit unit drain-s ource voltage v ds v g ate-s ource voltage v g s 10 v drain c urrent-c ontinuous @ t j =25 c -p uls ed i d 6.5 24 1.25 aa a w i dm drain-s ource diode f orward c urrent i s maximum p ower dis s ipation p d operating j unction and s torage temperature r ange t j , t s t g -55 to 150 c t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient r j a 100 /w c a a a a b 20 1.25 g d s s ot-23 g d s green product
s t s 2306e v g s 10v ,v ds 0v = = v g s 4.5v, i d = v ds 7v, i d 5a = = v g s 2.5v, i d = e l e c t r ic al c har ac t e r is t ic s (t a 25 c unles s otherwis e noted) = p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t ic s drain-s ource b reakdown voltage b v ds s = v g s 0v, i d 250ua = 20 v zero g ate voltage drain c urrent i ds s v ds 16v, v g s 0v = = 1 ua g ate-b ody leakage i g s s 10 ua on c har ac t e r is t ic s b g ate t hres hold voltage v g s (th) v ds v g s , i d = 250ua = 0.5 v drain-s ource on-s tate r es is tance r ds (on) c 2 m ohm 16 s f orward trans conductance f s g dy namic c har ac t e r is t ic s c input c apacitance c is s c r s s c os s output c apacitance r evers e trans fer c apacitance v ds =10v, v g s = 0v f =1.0mh z p f p f p f s wit c hing c har ac t e r is t ic s c turn-on delay time r is e time turn-off delay time t d(on) t r t d(of f ) t f v dd = 10v, i d = 1a, v g e n = 4.5v, r l = 10 ohm r g e n = 10 ohm ns ns ns ns 20 36 11 f all t ime 100 540 160 15 m ohm 40 total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =10v, i d = 6 a v g s =4.5v nc nc nc v ds =10v, i d =6a,v g s =4.5v nc v ds =10v, i d =6a,v g s =2.5v 6.4 2.8 1.1 4.6 0.9 32 1.5 24 30 = 6 a = 3 a
p arameter s ymbol c ondition min typ max unit e l e c t r ic al c har ac t e r is t ic s (t a =25 c unles s otherwis e noted) dr ain-s o ur c e dio de c har ac t e r is t ic s diode f orward voltage v s d v g s = 0v, is =1.25a v b c notes c.g uaranteed by des ign, not s ubject to production tes ting. b.p uls e tes t:p uls e width 300us , duty c ycle 2%. a.s urface mounted on f r 4 b oard, t 10s ec. 5 3 0.76 1.2 s t s 2306e f igure 1. output c haracteris tics f igure 2. trans fer c haracteris tics v g s , g ate-to-s ource voltage (v ) v ds , drain-to-s ource voltage (v ) i d , drain c urrent(a) i d , drain c urrent (a) 20 16 12 84 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -55 c 25 c 15 12 96 3 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 t j=125 c v g s =2v v g s =3v v g s =1.5v v g s =8v i d , drain c urrent (a) r ds (on) ( m ) 60 50 40 30 20 10 1 f igure 3. on-r es is tance vs . drain c urrent and g ate v oltage 4 8 12 16 20 1 v g s =2.5v v g s =4.5v f igure 4. on-r es is tance variation with drain c urrent and temperature on-r es is tance r ds (on) , normalized 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 t j( c ) 75 25 50 t j, j unction t emperature ( c ) v g s =2.5v i d =3a 125 v g s =4.5v i d =6a 150 v g s =2.5v
s t s 2306e f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage is , s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent v s d , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 4 6 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 1.20 1.15 1.10 1.05 1.00 0.95 0.90 i d =250ua v g s , g ate-s ource voltage (v ) r ds (on) ( m ) 60 50 40 30 20 10 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 1 2 4 6 8 0 f igure 5. g ate t hres hold v ariation with t emperature 25 c 125 c 75 c 25 c 75 c 125 c i d =6a 5.0
s t s 2306e 6 v g s , g ate to s ource v oltage (v ) f igure 10. g ate c harge q g, t otal g ate c harge (nc ) 5 43 2 1 0 0 1 2 3 4 5 6 7 8 v ds =10v i d =6a f igure 11.s witching characteris tics r g, g ate r es is tance ( ) s witching t ime (ns ) f igure 12. maximum s afe o perating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) 50 10 1 0.1 0.03 0.1 1 10 60 v g s =10v s ingle p uls e t a =25 c r ds ( o n ) l i m it 1 0ms 10 0ms 1s dc 100 10 1 1 6 10 60 100 60 600 300 600 v ds =10v ,id=1a v g s =4.5v t r t f 30 f igure 9. c apacitance v ds , drain-to s ource voltage (v ) c , c apacitance (pf ) 600 500 400 300 200 100 0 0 2 4 6 8 10 12 c is s c os s c rs s t d ( o n ) t d ( o f f ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 5
j 6 g a f c b l d (ty p. ) e h m i s t s 2306e 3 / 8 1 3 / 5 1 2 / 5 1 1 / 4 6 1 1 / 5 6 2 / : 1 ! s f g / 2 / 1 1 1 / 2 1 4 / 2 1 3 / 9 1 2 / 7 1 1 / 6 1 1 / 2 1 1 / 6 6 2 / 4 1 1 / 3 1 1 / 2 1 7 1 / 1 : 5 1 / 1 6 6 1 / 1 2 5 1 1 / 1 2 9 1 / 1 4 : 1 / 1 1 5 1 / 2 3 3 1 / 2 2 1 1 / 1 7 4 1 / 1 3 1 1 / 1 1 5 1 / 1 3 3 1 / 1 6 2 1 / 1 1 9 1 / 5 1 1 / 5 6 2 / 2 6 1 / 1 2 7 1 / 1 4 4 1 / 1 5 6 f g i j l m 1 / 1 8 6 ! s f g / . . 1 2 1 1 2 1
sot-23 tape and r eel data sot-23 carrier tape sot-23 ree l 7 s t s 2306e t r feed direction 3.20 2 0.10 3.00 2 0.10 1.33 2 0.10 1.00 +0.25 1.50 +0.10 8.00 +0.30-0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.20 2 0.02 unit: @ package sot-23 a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size
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